Qualification and reliability of a GaN process platform

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 83-86

  Singhal, S ^a   Hanson, A W ^a   Chaudhari, A ^a   Rajagopal, P ^a   Li, T ^a   Johnson, J W ^a   Nagy, W ^a   Therrien, R ^a   Park, C ^a   Edwards, A P ^a   Piner, E L ^a   Linthicum, K J ^a   Kizilyalli, I C ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

Gallium nitride; Power transistors; Reliability

Indexed keywords

CONCURRENT PRODUCT DEVELOPMENT; DRIFT RATES; POWER TRANSISTORS; PROCESS PLATFORMS; PROCESS REPEATABILITY;

ACTIVATION ENERGY; GALLIUM NITRIDE; POWER ELECTRONICS; PRODUCT DEVELOPMENT; SEMICONDUCTOR DEVICE MANUFACTURE;

RELIABILITY;

EID: 70449097953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J.W. Johnson, et al., "12W/mm AlGaN-GaN HFETs on silicon substrates." IEEE Electron Device Letters, 25(7), 459-461. (2004).
2. R. Therrien, et al., "A 36mm GaN-on-Si HFET Producing 368W at 60V with 70% Drain Efficiency". 2005 IEEE International Electron Devices Meeting (IEDM), Washington, DC. (2005).
3. J.W. Johnson, et al., "Material, process, and device development of GaN-based HFETs on silicon substrates." Electrochemical Society Proceedings, 2004-06, 405. (2004).
4. A.W. Hanson, et al., "Development of a GaN transistor process for linear power applications." 2004 International Conference on Compound Semiconductor Manufacturing Technology (GaAs MANTECH), Miami, FL. (2004).
5. I. Angelov, et al., "Large-Signal Modeling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs." 2006 Asia-Pacific Microwave Conference, Yokohama, Japan. (2006).