Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

Journal of Physics Condensed Matter

Volumn 15, Issue 44, 2003, Pages

  Klein, P B ^a   Binari, S C ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOIONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SPECTROSCOPY;

DEEP DEFECTS; PHOTOIONIZATION SPECTROSCOPY;

ELECTRON TRAPS;

EID: 0141837771     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/44/R01     Document Type: Review

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