Gate current degradation mechanisms of GaN high electron mobility transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 385-388

  Joh, Jungwoo ^a   Xia, Ling ^a   Del Alamo, Jesús A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON DEVICES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SULFATE MINERALS;

FORWARD BIAS; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE CURRENTS; OUTPUT POWERS; REVERSE BIASES; RF POWERING; SCHOTTKY JUNCTIONS; THERMAL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749104473     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418953     Document Type: Conference Paper

References (7)

1. H. Kim et al., IEEE Electron Dev. Lett., vol. 24, pp. 421-423, 2003.
2. C. Lee et al., Electron. Lett., vol. 41, pp. 155-157, 2005.
3. J. L. Jimenez et al., presented at ROCS, 2006.
4. J. Joh et al., IEEE IEDM Tech. Digest, 2006.
5. D. Pavlidis et al., GaAs Symposium proc., pp. 265-268, 2005.
6. A. Sozza et al., IEEE IEDM Tech. Digest, pp. 590-593, 2005.
7. R. Coffie et al., IEEE IRPS proc., pp. 99-102, 2006.