Ultrafast removal of LO-Mode heat from a GaN-based two-dimensional channel

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1118-1126

  Matulionis, Arvydas ^a   Liberis, Juozapas ^a   Matulioniene, Ilona ^a   Ramonas, Mindaugas ^a   Šermukšnis, Emilis ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

GaN based channels; Heterostructure field effect transistor; Phonon plasmon resonance; Two dimensional electron gas

Indexed keywords

CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; ELECTRON TEMPERATURE; ELECTRONS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; PHONONS; PLASMONS; SURFACE PLASMON RESONANCE;

FREQUENCY PERFORMANCE; GAN BASED; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; LONGITUDINAL OPTICAL PHONONS; ON-ELECTRON DENSITY; PLASMON RESONANCES; TWO DIMENSIONAL CHANNELS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

TWO DIMENSIONAL ELECTRON GAS;

EID: 77953687396     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2029877     Document Type: Conference Paper

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