Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

Journal of Physics D: Applied Physics

Volumn 35, Issue 7, 2002, Pages 595-598

  Tan, W S ^a   Houston, P A ^a   Parbrook, P J ^a   Hill, G ^a   Airey, R J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR GROWTH; SILICA; SILICON NITRIDE; SUBSTRATES;

DRAIN CURRENT; GATE LEAKAGE CURRENT; HIGH FREQUENCY CURRENT SWING; LEAKAGE ACTIVATION ENERGY; PASSIVATION DIELECTRICS; PIEZOELECTRIC POLARIZATION; POST PROCESSING SURFACE PASSIVATION; SELF BIASING; SURFACE STATES; TWO DIMENSIONAL ELECTRON GAS;

GALLIUM NITRIDE;

EID: 0037035258     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/35/7/304     Document Type: Article

References (16)