Accelerated RF life testing of GaN HFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 472-475

  Conway, A M ^a   Chen, M ^a   Hashimoto, P ^a   Willadsen, P J ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

GaN HFET; Reliability; RF life test

Indexed keywords

BANDWIDTH; GALLIUM NITRIDE; HETEROJUNCTIONS; RELIABILITY THEORY; STRESS ANALYSIS;

CHANNEL TEMPERATURES; LIFE TESTING;

FIELD EFFECT TRANSISTORS;

EID: 34548778697     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369936     Document Type: Conference Paper

References (3)

1. M. Micovic, et al., "GaN MMIC Technology for RF and mm-W Applications," 2005 CSIC, pp. 173-176.
2. Y-F. Wu, et al., "30-W/mm GaN HEMTs by field plate optimization." IEEE Elec. Dev. Lett., 2004;25:117-9.
3. M. Micovic, et al., "GaN Double Heterojunction Field Effect Transistor for RF and mm-W Power Applications," 2004 IEEE IEDM Dig., IEEE, Dec. 2004, pp. 807-810.