Hot-phonon effect on power dissipation in a biased Al xGa 1-xN/AlN/GaN channel

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 7, 2005, Pages

  Ramonas, M ^a   Matulionis, A ^a   Liberis, J ^a   Eastman, L ^b   Chen, X ^b   Sun, Y J ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GALLIUM; NITROGEN;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; CONDUCTANCE; ELECTRIC FIELD; ELECTRIC POWER PLANT; ELECTRON; ENERGY; ION CHANNEL; MONTE CARLO METHOD; PHONON; POISSON DISTRIBUTION; TEMPERATURE DEPENDENCE;

EID: 15744399147     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.075324     Document Type: Article

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