Control of short-channel effects in GaN/AlGaN HFETs

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Volumn , Issue , 2006, Pages 65-68

  Uren, M J ^a   Hayes, D G ^a   Balmer, R S ^a   Wallis, D J ^a   Hilton, K P ^a   Maclean, J O ^a   Martin, T ^a   Roff, C ^b   McGovern, P ^b   Benedikt, J ^b   Tasker, P J ^b  

^a QINETIQ   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Current slump; GaN; HEMT; Power added efficiency; RF power

Indexed keywords

ALUMINUM GALLIUM NITRIDE; BUFFER LAYERS; GALLIUM NITRIDE; IRON; SEMICONDUCTOR DOPING;

CURRENT SLUMP; IRON DOPING; POWER ADDED EFFICIENCY; SHORT CHANNEL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41549152995     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282751     Document Type: Conference Paper

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