Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

  Leach, J H ^a   Zhu, C Y ^a   Wu, M ^a   Ni, X ^a   Li, X ^a   Xie, J ^a   Ozgur U ^a   Morko H ^a   Liberis, J ^b   Sermuksnis E ^b   Matulionis, A ^b   Cheng, H ^c   Kurdak, C ^c  

^a Virginia Commonwealth University   (United States)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT GENERATION; DEGRADATION RATE; ELECTRON DENSITIES; GATE BIAS; GROUP VELOCITIES; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HIGH ELECTRIC FIELD STRESS; HOT PHONONS; LOCAL HEATING; LONGITUDINAL ACOUSTIC PHONONS; LONGITUDINAL OPTICAL PHONONS; MODELING DEVICES; ON-ELECTRON DENSITY; ROOM TEMPERATURE; ULTRAFAST DECAY;

CARRIER CONCENTRATION; DEGRADATION; ELECTRIC FIELDS; ELECTRON DENSITY MEASUREMENT; ELECTRON MULTIPLIERS; ELECTRONS; FLUORINE CONTAINING POLYMERS; GALLIUM ALLOYS; GALLIUM NITRIDE; JUNCTION GATE FIELD EFFECT TRANSISTORS; PHONONS; SEMICONDUCTING GALLIUM;

FIELD EFFECT TRANSISTORS;

EID: 71949099015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3271183     Document Type: Article

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