Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 2932-2940

  Meneghesso, Gaudenzio ^a,b   Rampazzo, Fabiana ^b   Kordoš, Peter ^c,d   Verzellesi, Giovanni ^a,e   Zanoni, Enrico ^a,b  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); Device simulation; Gate lag; Hot electron degradation; Hot electron stress

Indexed keywords

DEVICE SIMULATION; GATE LAGS; HOT ELECTRON DEGRADATION; HOT ELECTRON STRESS;

ALUMINUM GALLIUM NITRIDE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; GALLIUM NITRIDE; GATES (TRANSISTOR); HOT ELECTRONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33947253517     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885681     Document Type: Article

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