Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Leach, J H ^a   Fan, Q ^a   Xie, J ^a   Wu, M ^a   Ozgur U ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CROSS SECTIONS; DEEP-LEVEL TRANSIENT SPECTROSCOPIES; DEVICE RELIABILITIES; GATE LAGS; HETEROJUNCTION FIELD EFFECT TRANSISTORS; HIGH DENSITIES; HIGH FREQUENCIES; HIGH-POWER; LATTICE-MATCHED; PROMISING MATERIALS; RF PERFORMANCE; RF-POWER; SPATIAL LOCATIONS; TRANSIENT CURRENTS; TRAPPING LEVELS; TRAPPING MECHANISMS; TWO-DIMENSIONAL ELECTRON GAS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DRAIN CURRENT; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL DEVICES; SEMICONDUCTING GALLIUM;

DENSITY OF GASES;

EID: 65349107673     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809795     Document Type: Conference Paper

References (14)

1. E. Mitani, M. Aojima, A. Maekawa and S. Sano, "An 800-W AlGaN/GaN HEMT for S-band high-power application," CS MANTECH Conference, Austin, Texas, May 14-17 2007.
2. F. Medjdoub, J.F. Carlin, C. Gaquiere, N. Grandjean and E. Kohn, "Status of emerging InAlN/GaN power HEMT technology," Open Elec. and Electron. Eng. J. 2 pp. 1-7 (2008).
3. V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, J. Shealy, and L. Eastman, "Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 22, no. 11, pp. 580-582, Nov. 2001.
4. F. Medjdoub, M. Alomari, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean and E. Kohn, "Barrier layer scaling of InAlN/GaN HEMTs," IEEE Elec. Dev. Lett. 29, 422 (2008).
5. G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U.K. Mishra, C. Canali, and E. Zanoni, "Surface-Related Drain Current Dispersion Effects in AlGaN-GaN HEMTs", IEEE, Trans. Elec. Dev. 51, 1554 (2004).
6. O. Mitrofanov and M. Manfra, "Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors," Superlattices and Microstructures 34, pp33-53 (2003).
7. J. Kuzmik, J.-F. Carlin, M. Gonschorek, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo1, S. Golka1, A. Georgakilas, N. Grandjean, G. Strasser and D. Pogany, "Gate-lag and drain-lag effects in (GaN)InAlN/GaN and InAlN/AlN/GaN HEMTs," phys. stat. sol. (a) 204, 2019 (2007).
8. Transmission electron microscope images provided by Lin Zhao and Dave Smith, University of Arizona, unpublished.
9. Q. Fan, J.H. Leach, J. Xie, U. Ozgur and H. Morkoç, unpublished.
10. P.B. Klein, S.C. Binari, K. Ikossi, A.E. Wickenden, D.D. Koleske, and R.L. Henry, "Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy," Appl. Phys. Lett.79, 3527 (2001).
11. S.C. Binari, K. Ikossi, J. A Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A. E. Wickenden, and R.L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Elec. Dev. 48, 465 (2001).
12. O. Mitrofanov and M. Manfra, "Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy," Appl. Phys. Lett. 84, 422 (2004).
13. A. Tabata, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, A. Kharchenko, T. Frey, D.J. As, D. Schikora, K Lischka, J. Furthmuller and F. Bechstedt, "Phase separation suppression in InGaN epitaxial layers due to biaxial strain," Appl. Phys. Lett. 80, 769 (2002).
14. S.R. Lee, D.D. Koleske, K.C. Cross, J.A. Floro, K.E. Waldrip, A.T. Wise and S. Mahajan, "In situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures," Appl. Phys. Lett. 85, 6164 (2004).