Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1216-1221

  Malbert, N ^a   Labat, N ^a   Curutchet, A ^a   Sury, C ^a   Hoel, V ^b   de Jaeger, J C ^b   Defrance, N ^b   Douvry, Y ^b   Dua, C ^c   Oualli, M ^c   Bru Chevallier, C ^d   Bluet, J M ^d   Chikhaoui, W ^d  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b UNIV LILLE   (France)

^c NOKIA RESEARCH CENTER   (United States)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; STABILIZATION; TESTING;

CHANNEL TEMPERATURE; ELECTRICAL CHARACTERISTIC; FAILURE MECHANISM; HIGH ACTIVATION ENERGY; PHYSICAL MECHANISM; PINCH OFF VOLTAGE; SATURATION DRAIN CURRENT; SCHOTTKY CONTACTS;

DRAIN CURRENT;

EID: 69249230856     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.015     Document Type: Article

References (17)

1. Chini A., Buttari D., Coffie R., Heikman S., Keller S., and Mishra U.K. 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate. Electron Lett 40 1 (2004)
2. Wu Y.F., Saxler A., Moore M., Smith P., Sheppard S., Chavarkar P.M., Wisleder T., Mishra U.K., and Parikh P. 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Dev Lett 25 March (2004) 117-119
3. Koley G., Tilak V., Eastman L.F., and Spencer M.G. Slow transients observed in AlGaN/GaN HFETs: effects of SiNx passivation and UV illumination. IEEE Trans Electron Dev 50 4 (2003) 886-893
4. Sahoo D.K., Lal R.K., Kim H., Tilak V., and Eastman L.F. High-field effects in silicon nitride passivated GaN MODFETs. IEEE Trans Electron Dev 50 5 (2003) 1163-1170
5. Kim H., Thompson R.M., Tilak V., Prunty T.R., Shealy J.R., and Eastman L.F. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation. IEEE Electron Dev Lett 24 7 (2003) 421-423
6. Mizutani T., Ohno Y., Akita M., Kishimoto S., and Maezawa K. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress. IEEE Trans Electron Dev 50 10 (2003) 2015-2020
7. 3 plasma treatment prior to SiN passivation. IEEE Electron Dev Lett 26 4 (2005) 225-227
8. Lee C., Witkowski L., Tserng H.-Q., Saunier P., Birkhahn R., Olson D., Munns G., Guo S., and Albert B. Effects of AlGaN/GaN HEMT structure on RF reliability. Electron Lett 41 3 (2005) 155-157
9. 1-x N/GaN MODFETs. IEEE Trans Electron Dev 52 9 (2005) 1933-1939
10. Sozza A, Dua C, Morvan E, diForte-Poisson MA, Delage S, Rampazzo F, et al. Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress. In: IEDM tech. digest; 2005. p. 601-4.
11. Meneghesso G., Rampazzo F., Kordoš P., Verzellesi G., and Zanoni E. Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs. IEEE Trans Electron Dev 53 (2006) 2932-2941
12. Faqir M., Verzellesi G., Fantini F., Danesin F., Rampazzo F., Meneghesso G., Zanoni E., Cavallini A., Castaldini A., Labat N., Touboul A., and Dua C. Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs. Microelectron Reliab 47 (2007) 1639-1642
13. Joh J, del Alamo J. Mechanisms for electrical degradation of GaN high electron mobility transistors. In: IEDM tech. digest; 2006. p. 415-8.
14. Ducatteau D., Minko A., Hoël V., Morvan E., Delos E., Grimbert B., Lahreche H., Bove P., Gaquière C., De Jaeger J.C., and Delage S. IEEE EDL 27 1 (2006) 7-9
15. Mizutani T., Kawano A., Kishimoto S., and Maeazawa K. Phys Stat Sol 4 (2007)
16. Polyakov A.Y., Smirnov N.B., and Govorkov A.V. Solid-State Electron 47 (2003)
17. Piazza M., Dua C., Oualli M., Morvan E., Carisetti D., and Wyczisk F. Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs. Microelectron Reliab 49 9-11 (2009) 1222-1225