Thermal storage effects on AlGaN/GaN HEMT

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1361-1365

  Danesin, Francesca ^a   Tazzoli, Augusto ^a   Zanon, Franco ^a   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a   Cetronio, Antonio ^b   Lanzieri, Claudio ^b   Lavanga, Simone ^b   Peroni, Marco ^b   Romanini, Paolo ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b SELEX SISTEMI INTEGRATI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; FAILURE ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT STORAGE; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL DESIGN; OPTICAL MICROSCOPY; RELIABILITY; SAFETY FACTOR; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SURFACE CLEANING; WEIGHT CONTROL;

ALGAN/GAN HEMT; AND GATES; CURRENT COLLAPSE; DC CHARACTERIZATION; DEPOSITION PROCESSING; DRAIN SATURATION CURRENTS; ELECTRICAL MEASUREMENTS; ELECTRON MICROSCOPY.; GAN-HEMT; ON-STATE BREAKDOWN; OPTICAL-; PASSIVATION LAYERS; PULSED MEASUREMENTS; SIC SUBSTRATES; SURFACE CLEANING PROCEDURE; SURFACE TRAPPING; TRANSCONDUCTANCE PEAK; TRANSMISSION LINE; TRAPPING EFFECTS;

PASSIVATION;

EID: 50549091289     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.008     Document Type: Article

References (13)

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