Reliability of GaN HEMTs: Current status and future technology

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 61-70

  Ohki, Toshihiro ^a   Kikkawa, Toshihide ^a   Inoue, Yusuke ^a   Kanamura, Masahito ^a   Okamoto, Naoya ^a   Makiyama, Kozo ^a   Imanishi, Kenji ^a   Shigematsu, Hisao ^a   Joshin, Kazukiyo ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Component; GaN; Gate edge; Gate leakage current; HEMT; Oxidation; Reliability; Silicide

Indexed keywords

COMPONENT; GAN; GATE EDGE; GATE LEAKAGE CURRENT; HEMT;

ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOS CAPACITORS; OXIDATION; RELIABILITY; SEMICONDUCTING GALLIUM; SILICIDES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70449133497     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173225     Document Type: Conference Paper

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