TEM observation of crack- and pit-shaped defects in electrically degraded GaN HEMTs

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1098-1100

  Chowdhury, Uttiya ^a   Jimenez, Jose L ^a   Lee, Cathy ^a   Beam, Edward ^a   Saunier, Paul ^a   Balistreri, Tony ^b   Park, Seong Yong ^b   Lee, Taehun ^b   Wang, J ^b   Kim, Moon J ^b   Joh, Jungwoo ^c   del Alamo, Jesus A ^c  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Electron microscopy; Gallium compounds; Life estimation; Microwave FETs; Semiconductor heterojunctions

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; MATERIALS SCIENCE; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM;

ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; LIFE ESTIMATION; MICROWAVE FETS; SEMICONDUCTOR HETEROJUNCTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 54849374500     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2003073     Document Type: Article

References (8)

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