Low Damage, Cl2-Based Gate Recess Etching for 0.3-μm Gate-Length AlGaN/GaN HEMT Fabrication

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 52-54

  Wang, Wen Kai ^a   Li, Yu Jen ^a   Lin, Cheng Kuo ^a   Chan, Yi Jen ^a   Chen, Guan Ting ^a   Chyi, Jen Inn ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN HEMT; Cl2 based plasma; Reactive ion etching (RIE) recess etching

Indexed keywords

CHLORINE; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; ION BOMBARDMENT; METHANE; OHMIC CONTACTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE PROPERTIES;

ALGAN/GAN HEMT; CL2-BASED PLASMAS; RECESS ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1342286956     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822669     Document Type: Article

References (5)

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