Physical mechanism of buffer-related lag and current collapse in GaN-based FETs and their reduction by introducing a field plate

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 722-726

  Nakajima, Atsushi ^a   Itagaki, Keiichi ^a   Horio, Kazushige ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Current collapse; Device simulation; Field plate; GaN; HEMT; Trap

Indexed keywords

CURRENT COLLAPSE; DEVICE SIMULATION; FIELD PLATE; GAN; HEMT; TRAP;

BUFFER LAYERS; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; PASSIVATION; PLATES (STRUCTURAL COMPONENTS); SEMICONDUCTING GALLIUM; SILICON NITRIDE; TRANSIENT ANALYSIS;

ELECTRIC CURRENT MEASUREMENT;

EID: 70449102621     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173337     Document Type: Conference Paper

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