Reliability of large periphery GaN-on-Si HFETs

Microelectronics Reliability

Volumn 46, Issue 8, 2006, Pages 1247-1253

  Singhal, S ^a   Li, T ^a   Chaudhari, A ^a   Hanson, A W ^a   Therrien, R ^a   Johnson, J W ^a   Nagy, W ^a   Marquart, J ^a   Rajagopal, P ^a   Roberts, J C ^a   Piner, E L ^a   Kizilyalli, I C ^a   Linthicum, K J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTRON ENERGY LEVELS; FAILURE ANALYSIS; GALLIUM NITRIDE; MATERIALS SCIENCE; STATISTICAL METHODS;

DEVICE LEVEL RELIABILITY; ENVIRONMENTAL TESTS; NON-STATISTICAL NATURE; RUGGEDNESS;

FIELD EFFECT TRANSISTORS;

EID: 33746228283     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.02.009     Document Type: Article

References (9)

1. Hanson A.W., et al. Development of a GaN transistor process for linear power applications. Comput Semicond MANTECH (2004) 107-110
2. Johnson J.W., et al. Material, process, and device development of GaN-based HFETs on silicon substrates. Electrochem Soc Proc 2004-06 (2004) 405-419
3. Johnson J.W., et al. 12 W/mm AlGaN-GaN HFETs on silicon substrates. IEEE Electron Dev Lett 25 7 (2004) 459-461
4. Nagy W., et al. 150 W GaN-on-Si RF power transistor. IEEE MTT-S Int Microwave Symp Dig (2005)
5. JEDEC Publication No. JEP118B.
6. Cheng C et al. Hot carrier degradation in LDMOS power transistors. In: Proceedings of the 11th international symposium on the physical and failure analysis of integrated circuits 2004. 2004. p. 283-6.
7. Yang B et al. Reliability of 6 inch 0.4 μm-gate PHEMT device. In: Proceedings of GaAs reliability workshop 2000. 2000. p. 53-61.
8. Marsh PF et al. Reliability of metamorphic HEMTs on GaAs substrates. In: Proceedings of GaAs reliability workshop 2001. 2001. p. 119-32.
9. Singhal S et al. GaN-on-Si failure mechanisms and reliability improvements. To be presented at IRPS 2006 San Jose, CA.