X-band GaN fet reliability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 429-435

  Jimenez, J L ^a   Chowdhury, U ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATIONS.; MULTI-STRUCTURE; RELIABILITY PHYSICS;

COMPUTER NETWORKS; FAILURE ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; RELIABILITY ANALYSIS; SAFETY FACTOR; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

RELIABILITY;

EID: 51549100073     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558923     Document Type: Conference Paper

References (13)

1. P. Saunier, C. Lee, A. Balistreri, D. Dumka, J. L. Jimenez, H. Q. Tserng, M.Y. Kao, P.C. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, and M. Shur, "Progress in GaN Performances and Reliability", Proceedings, IEEE Dev. Res. Conference (DRC) June 2007.
2. D. Fanning, A. Balistreri, E. Beam III, K. Decker, S. Evans, R. Eye, W. Gaiewski, T. Nagle, P. Saunier, and H.-Q. Tserng, "High Voltage GaAs pHEMT Technology for S-band High Power Amplifiers", 2007 Internat. Conf. on Comp. Semicond. Manuf. Tech. (CS-Mantech), Austin, TX, May 2007.
3. J. Joh, and J. A. del Alamo, " Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors", Proceedings, IEEE Int. Electron. Dev. Meeting, pp. 415-418, Dec. 2006.
4. C. Lee, J. L. Jimenez, M. Kao, P. Saunier, T. Balistreri, A. Souzis, S. Guo, "Uniformity Correlation of ALGaN/GaN HEMTs grown on 3-inch SiC substrate", CS Mantech 2007.
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10. X. A. Cao, S. J. Pearton, G. Dang, A. P. Zhang, F. Ren, and J. M. Van Hove, "Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN", Appl. Phys. Lett., vol. 75, pp. 4130- 132, Dec. 1999.
11. Preliminary data first presented: J. L. Jimenez, U. Chowdhury, M. Y. Kao, A. Balistreri, C. Lee, P. Saunier, P. C. Chao, W. W. Hu, K. Chu, A. Immorlica, J. del Alamo, J. Joh, and M. Shur, 2006 Rel. Comp. Semicond. Workshop (ROCS), San Antonio TX, Nov. 2006.
12. Several TEMs studies of room temperature degraded devices have been perfomed at TriQuint without success identifying a mechnical signature.
13. U. Chowdhury, J. L. Jimenez, C Lee, E. Beam, P. Saunier, T. Balistreri; S.-Y Park, T. Lee, J. Wang, M. J. Kim; J. Joh, and J. A. del Alamo "TEM observation of crack- and pit-shaped defects in electrically degraded GaN HEMTs to appear in Electronic Device Letter.