Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 886-893

  Koley, Goutara ^a   Tilak, Vinayak ^a   Eastman, Lester F ^a   Spencer, Michael G ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

AlGaN GaN HFETs; Current collapse; Kelvin probe; Passivation; SiNx; Surface traps; Transients; UV illumination

Indexed keywords

ELECTRIC POTENTIAL; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHTING; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; ULTRAVIOLET RADIATION;

DRAIN CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 0037480894     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812489     Document Type: Article

References (16)

1. L. F. Eastman et al., "Undoped AlGaN/GaN HEMT's for microwave power amplification," IEEE Trans. Electron Devices, vol. 48, pp. 479-485, Mar. 2001.
2. S. Keller et al., "Gallium Nitride based high power heterojunction field effect transistors: Process development and present status at UCSB," IEEE Trans. Electron Devices, vol. 48, pp. 552-559, Mar. 2001.
3. Y.-F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, "Very-high power density AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, pp. 586-590, Mar. 2001.
4. O. Ambacher et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol. 85, pp. 3222-3233, 1999.
5. V. Tilak et al., "Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 22, pp. 504-506, Nov., 2001.
6. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's," IEEE Electron Device Lett., vol. 21, pp. 268-270, June 2000.
7. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, pp. 560-566, Mar. 2001.
8. H. Leier, A. Vescan, R. Dietrich, A. Wieszt, and H. H. Sledzik, "RF characterization and transient behavior of AlGaN/GaN power HFETs," IEICE Trans. Electron., vol. E84-C, pp. 1442-1447, 2001.
9. S. C. Binari et al., "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, pp. 465-471, Mar. 2001.
10. A. Tarakji, G. Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska, "Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors," Appl. Phys. Lett., vol. 78, pp. 2169-2171, 2001.
11. J. A. Smart, A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy, "AlGaN/GaN heterostructures on insulating AlGaN nucleation layers," Appl. Phys. Lett., vol. 75, pp. 388-390, 1999.
12. G. Koley and M. G. Spencer, "Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy," J. Appl. Phys., vol. 90, pp. 337-344, 2001.
13. G. Koley, M. G. Spencer, and H. R. Bhangale, "Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy," Appl. Phys. Lett., vol. 79, pp. 545-547, 2001.
14. A. Vertiatchik, L. F. Eastman, W. J. Schaff, and T. Prunty, "Effect of surface passivation of AlGaN/GaN heterostructure field effect transistor," Electron. Lett., vol. 38, pp. 388-389, 2002.
15. R. Dietrich et al., "Effect of illumination on the electrical characteristics of AlGaN/GaN FETs," Phys. Stat. Sol. (A), vol. 176, pp. 209-212, 1999.
16. G. Koley, H.-Y. Cha, C. I. Thomas, and M. G. Spencer, "Laser-induced surface potential transients observed in III-nitride heterostructures," Appl. Phys. Lett., vol. 81, pp. 2282-2284, 2002.