Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1592-1602

  Faqir, Mustapha ^a,b   Verzellesi, Giovanni ^a   Meneghesso, Gaudenzio ^c   Zanoni, Enrico ^c   Fantini, Fausto ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITÉ BORDEAUX 1   (France)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

GaN HEMTs; High field degradation; Numerical simulation; Reliability; Trapping effects

Indexed keywords

AMPLIFICATION; COMPUTER SIMULATION; DEGRADATION; DRAIN CURRENT; DROPS; EXPERIMENTS; FIELD EFFECT TRANSISTORS; FLUID MECHANICS; GALLIUM NITRIDE; LEAKAGE CURRENTS; PARAMETER ESTIMATION; PHOTOACOUSTIC EFFECT; POWER GENERATION; SEMICONDUCTING GALLIUM; TRANSCONDUCTANCE;

(1 1 0) SURFACE; (ABIOTIC AND BIOTIC) STRESS; (I ,J) CONDITIONS; ALGAN GAN; CHANNEL TRANSPORT; DEGRADATION EFFECTS; DEVICE SIMULATIONS; EXPERIMENTAL DATA; GATE EDGE; LAG EFFECTS; NUMERICAL SIMULATIONS; OFF-STATE STRESS; REVERSE GATE; SOURCE VOLTAGES; STRESS INDUCED; TRAP GENERATION; VOLT AGE RANGE;

SULFATE MINERALS;

EID: 46649101091     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.924437     Document Type: Article

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