Carrier-transport-enhanced channel CMOS for improved power consumption and performance

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 21-39

  Takagi, Shinichi ^a,b   Irisawa, Toshifumi ^a   Tezuka, Tsutomu ^a   Numata, Toshinori ^a   Nakaharai, Shu ^a   Hirashita, Norio ^a   Moriyama, Yoshihiko ^a   Usuda, Koji ^a   Toyoda, Eiji ^c   Dissanayake, Sanjeewa ^b   Shichijo, Masato ^b   Nakane, Ryosho ^b   Sugahara, Satoshi ^d   Takenaka, Mitsuru ^b   Sugiyama, Naoharu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c Nissei Bldg   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Density of states (DOS); Effective mass; Ge; Ge on insulator (GOI); III V semiconductor; Mobility; Multigate MOSFET; Strained Si; Subband engineering; Supply voltage; Surface orientation; Uniaxial strain; Velocity

Indexed keywords

CARRIER TRANSPORT; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CARRIER-TRANSPORT-ENHANCED CHANNEL CMOS; DENSITY-OF-STATES (DOS); GERMANIUM-ON-INSULATOR (GOI); MULTIGATE MOSFET; SUPPLY VOLTAGE; UNIAXIAL STRAIN;

ELECTRIC POWER UTILIZATION;

EID: 37749005736     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911034     Document Type: Article

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