SCOPUS 정보 검색 플랫폼

Volumn 237-239, Issue 1-4 II, 2002, Pages 1410-1417

Microchannel epitaxy: An overview

Author keywords

A1. Defects; A3. Liquid phase epitaxy A3. Molecular beam epitaxy A3. Selective epitaxy; B2. Semiconducting gallium arsenides B2. Semiconducting gallium compounds B2. Semiconducting III V materials B2. Semiconducting silicon

Indexed keywords

AMORPHOUS FILMS; CRYSTAL DEFECTS; CRYSTAL LATTICES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THICKNESS MEASUREMENT;

MICROCHANNEL EPITAXY;

SINGLE CRYSTALS;

EID: 0036530612 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02227-8 Document Type: Article

Times cited : (68)

References (36)

1
- 0017969217
- (1978) Jpn. J. Appl. Phys. , vol.17 , pp. 773
- Ohnishi, S.¹ Hirokawa, Y.² Shiosaki, T.³ Kawabata, A.⁴

2
- 0019283390
- (1980) J. Electrochem. Soc. , vol.127 , pp. 2674
- Nishino, S.¹ Hazuki, Y.² Matsunami, H.³ Tanaka, T.⁴

3
- 4243784974
- (1981) Jpn. J. Appl. Phys. , vol.20
- Ishida, M.¹ Ohyama, H.² Sasaki, S.³ Yasuda, Y.⁴ Nishinaga, T.⁵ Nakamura, T.⁶

4
- 0023040588
- (1986) Appl. Phys. Lett. , vol.48 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³ Toyoda, Y.⁴

5
- 0024019638
- (1988) Jpn. J. Appl. Phys. , vol.27
- Nishinaga, T.¹ Nakano, T.² Zhang, S.³

6
- 0002043722
- H. Hayakawa, Y. Enomoto (Eds.), Springer, Tokyo
- (1996) Advances in Superconductivity VIII , pp. 33
- Nishinaga, T.¹ Scheel, H.J.²

7
- 0006165594
- (1981) J. Crystal Growth , vol.54 , pp. 101
- Vohl, P.¹

8
- 0006204099
- (1982) J. Electrochem. Soc. , vol.129 , pp. 2302
- Rathman, D.D.¹ Silversmith, D.J.² Burns, J.A.³

9
- 0020783502
- (1983) J. Electrochem. Soc. , vol.130 , pp. 1571
- Jastzebski, L.¹ Corboy, J.F.² McGinn, J.T.³ Pogliar R., Jr.⁴

10
- 0001312210
- (1982) Appl. Phys. Lett. , vol.41 , pp. 347
- Tsauer, B.-Y.¹ McClelland, R.W.² Fan, J.C.C.³ Gale, R.P.⁴ Salerno, J.P.⁵ Vojak, B.A.⁶ Bozler, C.O.⁷

11
- 0006165595
- (1986) Mater. Res. Soc. Symp. Proc. , vol.54 , pp. 267
- Bauser, E.¹ Kass, D.² Warth, M.³ Strunk, H.P.⁴

12
- 0024629562
- (1989) Jpn. J. Appl. Phys. , vol.28
- Ujiie, Y.¹ Nishinaga, T.²

13
- 0024627615
- (1989) Jpn. J. Appl. Phys. , vol.28 , pp. 440
- Suzuki, Y.¹ Nishinaga, T.²

14
- 0025403376
- (1990) Jpn. J. Appl. Phys. , vol.29 , pp. 545
- Zhang, S.¹ Nishinaga, T.²

15
- 0026837517
- (1992) Jpn. J. Appl. Phys. , vol.31
- Sakawa, S.¹ Nishinaga, T.²

16
- 0029218916
- (1995) J. Crystal Growth , vol.146 , pp. 314
- Naritsuka, S.¹ Nishinaga, T.²

17
- 0029404442
- (1995) Jpn. J. Appl. Phys. , vol.34
- Naritsuka, S.¹ Nishinaga, T.² Tachikawa, M.³ Mori, H.⁴

18
- 0031187047
- (1997) Jpn. J. Appl. Phys. , vol.36
- Usui, A.¹ Sunakawa, H.² Sakai, A.³ Yamaguchi, A.A.⁴

19
- 0006165596
- (1990) Jpn. J. Appl. Phys. , vol.29 , pp. 97
- Suzuki, Y.¹ Nishinaga, T.²

20
- 0025246825
- (1990) J. Crystal Growth , vol.99 , pp. 229
- Suziki, Y.¹ Nishinaga, T.² Sanada, T.³

21
- 0026414710
- (1991) J. Crystal Growth , vol.115 , pp. 561
- Kinosita, S.¹ Suzuki, T.² Nishinaga, T.³

22
- 0025258641
- (1990) J. Crystal Growth , vol.99 , pp. 292
- Zhang, S.¹ Nishinaga, T.²

23
- 0031547415
- (1997) J. Crystal Growth , vol.174 , pp. 630
- Chang, Y.S.¹ Naritsuka, S.² Nishinaga, T.³

24
- 0032475004
- (1998) J. Crystal Growth , vol.192 , pp. 18
- Chang, Y.S.¹ Naritsuka, S.² Nishinaga, T.³

25
- 0033148283
- (1999) J. Crystal Growth , vol.203 , pp. 459
- Naritsuka, S.¹ Nishinaga, T.²

26
- 84996222466
- (1956) Phil. Mag. , vol.1 , pp. 450
- Cabrera, N.¹ Levine, M.M.²

27
- 0032475018
- (1998) J. Crystal Growth , vol.192 , pp. 11
- Yan, Z.¹ Naritsuka, S.² Nishinaga, T.³

28
- 0033514572
- (1999) J. Crystal Growth , vol.198-199 , pp. 1077
- Yan, Z.¹ Naritsuka, S.² Nishinaga, T.³

29
- 0003090570
- (1999) J. Crystal Growth , vol.203 , pp. 25
- Yan, Z.¹ Naritsuka, S.² Nishinaga, T.³

30
- 0343577647
- (1993) Appl. Phys. , vol.A57 , pp. 249
- Nagel, N.¹ Barnhart, F.² Phillipp, F.³ Czeck, E.⁴ Silier, I.⁵ Bauser, E.⁶

31
- 0006213023
- (1993) Appl. Phys. , vol.A57 , pp. 441
- Barnhart, F.¹ Nagel, N.² Czeck, E.³ Silier, I.⁴ Phillipp, F.⁵ Bauser, E.⁶

32
- 0033745274
- (2000) J. Crystal Growth , vol.212 , pp. 1
- Yan, Z.¹ Hamaoka, Y.² Naritsuka, S.³ Nishinaga, T.⁴

33
- 0035457064
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 5373
- Huang, W.D.¹ Nishinaga, T.² Naritsuka, S.³

34
- 0033881856
- (2000) J. Crystal Growth , vol.208 , pp. 1
- Bacchin, G.¹ Nishinaga, T.²

35
- 0034207181
- (2000) Appl. Surf. Sci. , vol.159-160 , pp. 360
- Bacchin, G.¹ Umeno, A.² Nishinaga, T.³

36
- 0034499156
- (2000) J. Crystal Growth , vol.220 , pp. 355
- Umeno, A.¹ Bacchin, G.² Nishinaga, T.³

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