Selectively-formed high mobility SiGe-on-insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 198-199

  Tezuka, Tsutomu ^a   Nakaharai, Shu ^a   Moriyama, Yoshihiko ^a   Sugiyama, Naoharu ^a   Takagi, Shin Ichi ^b,c  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; ELECTRIC INSULATORS; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; FABRICATION; GERMANIUM; HOLE MOBILITY; MOS CAPACITORS; OXIDATION; SEMICONDUCTING SILICON; STRAIN; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL TRANSISTORS; PERFORMANCE ENHANCEMENT; SIGE-ON-INSULATOR (SGOI); THERMAL OXIDATION;

MOSFET DEVICES;

EID: 4544369573     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345477     Document Type: Conference Paper

References (8)

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