Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 230-232

  Mizuno, T ^a   Takagi, S ^a   Sugiyama, N ^a   Satake, H ^a   Kurobe, A ^a   Toriumi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; ION IMPLANTATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL REGROWTH TECHNIQUE; SEPARATION BY IMPLANTED OXYGEN; SILICON GERMANIUM ON INSULATOR;

MOSFET DEVICES;

EID: 0033740561     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841305     Document Type: Article

References (8)

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