High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 178-179

  Irisawa, Toshifumi ^a   Numata, Toshinori ^a   Tezuka, Tsutomu ^a   Usuda, Koji ^a   Hirashita, Norio ^a   Sugiyama, Naonaru ^a   Toyoda, Eiji ^a   Takagi, Shin Ichi ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

SGOI and High mobility channel; Uniaxial stress

Indexed keywords

ELECTRIC INSULATORS; GATES (TRANSISTOR); RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN CONTROL; STRESSES;

GATE LENGTH; SGOI AND HIGH MOBILITY CHANNEL; SIGE-ON-INSULATOR (SGOI); UNIAXIAL STRESS;

MOSFET DEVICES;

EID: 33745141899     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469258     Document Type: Conference Paper

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