Growth and transport properties of complementary germanium nanowire field-effect transistors

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4176-4178

  Greytak, Andrew B ^a   Lauhon, Lincoln J ^a   Gudiksen, Mark S ^a   Lieber, Charles M ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORE-SHELL METHODS; GERMANIUM NANOWIRES; HOMOGENOUS RADICAL GROWTH; VAPOR-LIQUID-SOLID (VLS) GROWTH;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CURRENTS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GOLD; NANOSTRUCTURED MATERIALS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); TRANSCONDUCTANCE; WIRE;

GERMANIUM;

EID: 2942640234     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755846     Document Type: Article

References (24)

1. C. M. Lieber, Mater. Res. Bull. 28, 486 (2003).
2. Y. Cui and C. M. Lieber, Science 291, 851 (2001).
3. Y. Cui, Q. Q. Wei, H. K. Park, and C. M. Lieber, Science 293, 1289 (2001).
4. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, Nano Lett. 1, 453 (2001).
5. A. Javey, Q. Wang, A. Ural, Y. M. Li, and H. J. Dai, Nano Lett. 2, 929 (2002).
6. Z. H. Zhong, F. Qian, D. L. Wang, and C. M. Lieber, Nano Lett. 3, 343 (2003).
7. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
8. A. M. Morales and C. M. Lieber, Science 279, 208 (1998).
9. Y. Y. Wu and P. D. Yang, Chem. Mater. 12, 605 (2000).
10. G. Gu, M. Burghard, G. T. Kim, G. S. Dusberg, P. W. Chiu, V. Krstic, S. Roth, and W. Q. Han, J. Appl. Phys. 90, 5747 (2001).
11. L. J. Lauhon, M. S. Gudiksen, D. L. Wang, and C. M. Lieber, Nature (London) 420, 57 (2002).
12. D. Wang, Q. Wang, A. Javey, R. Tu, H. J. Dai, H. Kim, P. McIntyre, T. Krishnamohan, and K. C. Saraswat, Appl. Phys. Lett. 83, 2432 (2003).
13. Y. Cui, L. J. Lauhon, M. S. Gudiksen, J. F. Wang, and C. M. Lieber, Appl. Phys. Lett. 78, 2214 (2001).
14. In agreement with D. Wang, Q. Wang, A. Javey, R. Tu, H. J. Dai, H. Kim, P. McIntyre, T. Krishnamohan, and K. C. Saraswat, Appl. Phys. Lett. 83, 2432 (2003), we found the VLS growth mechanism to be active at 285°C despite the fact that the bulk Ge-Au eutectic temperature is 361°C. We additionally found, however, that the initial nucleation step at 320°C greatly improved the nanowire yield compared to isothermal growth at 285°C.
15. Under our conditions, P deposition is expected to saturate at 0.1-0.4 monolayers (MLs). Deposition of B is not self-limiting, but only the first ML is electrically active. We estimate ∼1 ML of B deposition under our conditions.
16. T. C. Shen, J. Y. Ji, M. A. Zudov, R. R. Du, J. S. Kline, and J. R. Tucker, Appl. Phys. Lett. 80, 1580 (2002).
17. B. E. Weir, L. C. Feldman, D. Monroe, H. J. Grossmann, R. L. Headrick, and T. R. Hart, Appl. Phys. Lett. 65, 737 (1994).
18. B. Tillack, B. Heinemann, and D. Knoll, Thin Solid Films 369, 189 (2000).
19. Nanowires suspended in ethanol were dispersed onto a Cu grid with a lacey carbon support film, and imaged with a JEOL 2010F TEM at an accelerating voltage of 200 kV.
20. Y. Huang, X. F. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 2, 101 (2002).
21. Y. Cui, Z. H. Zhong, D. L. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003).
22. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, Tech. Dig. - Int. Electron Devices Meet., 437 (2002).
23. H. Shang, H. Okorn-Schimdt, J. Ott, P. Kozlowski, S. Steen, E. C. Jones, H. S. P. Wong. and W. Hanesch, IEEE Electron Device Lett. 24, 242 (2003).
24. M. S. Gudiksen, Ph.D. thesis, Harvard University, 2002.