Novel fully-depleted SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 946-948

  Tezuka, T ^a   Sugiyama, N ^a   Mizuno, T ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; HOLE MOBILITY; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

CHANNEL LAYER; HIGH TEMPERATURE OXIDATION; INVERSION-LAYER MOBILITY; SILICON GERMIDE-ON-INSULATOR PMOSFETS;

MOSFET DEVICES;

EID: 0035717953     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)