Assessment of Ge n-MOSFETs by Quantum Simulation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 471-474

  Rahman, Anisur ^a   Ghosh, Avik ^a   Lundstrom, Mark ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS EQUATION (EME); QUANTUM SCATTERING;

CAPACITANCE; CHARGE TRANSFER; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC RESISTANCE; ELECTRON MOBILITY; HOLE MOBILITY; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SILICON WAFERS; THICKNESS MEASUREMENT;

MOSFET DEVICES;

EID: 0842266597     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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5. A. Rahman et al, under preparation, available on request.
6. Semiconductor Industry Association (SIA), ITRS 2001.
7. Z. Ren et al, IEEE TED, pp. 1914-1925, Sept. 2003.
8. S. Hasan et al, submitted for publication.
9. R. Venugopal et al, J. of Appl. Phys., 93, pp. 5613-5625, 2003.
10. P. Solomon and S. Laux, IEDM Tech. Digest, pp. 95-98, Dec. 2001.