Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 135-138

  Laux, S E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTALLOGRAPHY; ELECTRIC CURRENTS; MATHEMATICAL TRANSFORMATIONS; MODAL ANALYSIS; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; THRESHOLD VOLTAGE;

BRILLOUIN ZONES; EVANESCENT WAVES; QUANTUM DEVICE ANALYSIS BY MODAL EVALUATION (QDAME); WORKFUNCTION;

FIELD EFFECT TRANSISTORS; BALLISTICS;

BALLISTIC LIMIT; N-CHANNEL; QUANTISATION; SI(1 0 0); SIMULATION STUDIES; SWITCHING PERFORMANCE; TWO-DIMENSIONAL;

EID: 21644483575     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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