Electron transport properties of ultrathin-body and tri-gate SOI nMOSFETs with biaxial and uniaxial strain

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Irisawa, Toshifumi ^a   Numata, Toshinori ^a   Tezuka, Tsutomu ^a   Sugiyama, Naoharu ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MOSFET DEVICES; TRANSPORT PROPERTIES;

MOBILITY ENHANCEMENT; MOSFETS; N-MOSFETS; TRI-GATE; UNI-AXIAL STRAINS; UTB MOSFETS;

ELECTRONS;

EID: 46049115710     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346811     Document Type: Conference Paper

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8. T. Tezuka et al., VLSI Symp., 88 (2005).