Performance of Super-Critical Strained-Si Directly on Insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 134-135

  Thean, A V Y ^a   White, T ^a   Sadaka, M ^a   McCormick, L ^a   Ramon, M ^a   Mora, R ^a   Beckage, P ^a   Canonico, M ^a   Wang, X D ^a   Zollner, S ^a   Murphy, S ^a   Van Der Pas, V ^a   Zavala, M ^a   Noble, R ^a   Zia, O ^a   Kang, L G ^a   Kolagunta, V ^a   Cave, N ^a   Cheek, J ^a   Mendicino, M ^a   Nguyen, B Y ^a   Orlowski, M ^a   Venkatesan, S ^a   Mogab, J ^a   Chang, H ^b   Chiu, Y H ^b   Tuan, H C ^b   See, Y C ^b   Liang, M S ^b   Sun, Y C ^b   Cayrefourcq, I ^c   Metral, F ^c   Kennard, M ^c   Mazure, C ^c   more..

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; PERFORMANCE; SILICON ON INSULATOR TECHNOLOGY; STRAIN; THERMODYNAMIC STABILITY;

PD-SOI TECHNOLOGY; SUPER-CRITICAL STRAINED-SI DIRECTLY ON INSULATOR (SC-SSOI); TRIPLE-GATE OXIDE; WAFER-BONDING;

CMOS INTEGRATED CIRCUITS;

EID: 33745148648     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469242     Document Type: Conference Paper

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