High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 243-245

  Tezuka, Tsutomu ^a   Nakaharai, Shu ^a   Moriyama, Yoshihiko ^a   Sugiyama, Naoharu ^a   Takagi, Shin Ichi ^b,c  

^a MIRAI ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Mobility enhancement; SiGe MOSFET; Silicon on insulator (SOI) technology; Strained SiGe channel; Surface channel MOSFET; Ultrathin body SOI

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; HOLE MOBILITY; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

MOBILITY ENHANCEMENT; STRAINED SILICON-GERMANIUM CHANNEL; SURFACE CHANNEL MOSFET; ULTRATHIN BODY SILICON-ON-INSULATOR;

MOSFET DEVICES;

EID: 17644392457     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.844699     Document Type: Article

References (11)

1. 7 heterostructures," Appl. Phys. Lett., vol. 81, pp. 847-850, Jul. 2002.
2. M. L. Lee and E. A. Fitzgerald, "Optimized strained Si/strained Ge dual-channel heterostructures for high mobility P- and N-MOSFETs," in IEDM Tech. Dig., 2003, pp. 429-432.
3. 0.83 channel metal-oxide-semi-conductor field-effect transistors grown by plasma-enhanced chemical vapor deposition," Appl. Phys. Lett., vol. 76, pp. 3920-3922, Jun. 2000.
4. S. Takagi, "Re-examination of subband structure engineering in ultra-short channel MOSFET's under ballistic carrier transport," in Symp. VLSI Tech. Dig., 2003, pp. 115-116.
5. T. Low, Y. T Hou, M. F. Li, C. Zhu, A. Chin, G. Samudra, L. Chan, and D.-L. Kwong, "Investigation of performance limits of germanium double-gated MOSFETs," in IEDM Tech. Dig., 2003, pp. 691-694.
6. T. Tezuka, N. Sugiyama, and S. Takagi, "Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction," Appl. Phys. Lett., vol. 79, pp. 1798-1800, Sep. 2001.
7. S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S. Takagi, "Characteriation of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique," Appl. Phys. Lett., vol. 83, pp. 3516-3518, Oct. 2003.
8. x layers," J. Appl. Phys., vol. 75, pp. 8098-8108, Jun. 1994.
9. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFET' s: part I-effects of substrate impurity concentration," IEEE Trans. Electron. Devices, vol. 41, no. 12, pp. 2357-2362, Dec. 1994.
10. M. T. Currie, C. W. Leitz, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis, "Carrier mobilities and process stability of strained Si n- and p-MOSFET's on SiGe virtual substrates," J. Vac. Sci. Technol. B, vol. 19, pp. 2268-2279, Nov./Dec. 2001.
11. T. Tezuka, N. Sugiyama, T. Mizuno; and S. Takagi, "Novel fully-de- pleted SiGe-on-insulator pMOSFET's with high-mobility SiGe surface channels," in IEDM Tech. Di., 2001, pp.946-948.