A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 nm strained silicon-on-insulator MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2866-2874

  Tezuka, Tsutomu ^a   Sugiyama, Naoharu ^a   Mizuno, Tomohisa ^a   Suzuki, Masamichi ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Dislocation; Field effect transistor; Metal oxide semiconductor; Oxidation; Oxide; Silicon germanium; Silicon on insulator; Strained silicon

Indexed keywords

HIGH TEMPERATURE EFFECTS; OXIDATION; OXIDES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

BURIED OXIDE (BOX) LAYERS; STRAINED SILICON;

MOSFET DEVICES;

EID: 0035300641     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2866     Document Type: Article

References (27)