A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2280-2288

  Fuchs, Emmanuel ^b,c,d   Dollfus, Philippe ^c   Le Carval, Gilles ^d   Barraud, Sylvain ^d   Villanueva, Davy ^e   Salvetti, Frederic ^e   Jaouen, Hervé ^b   Skotnicki, Thomas ^a,b  

^a IEEE

^b STMICROELECTRONICS   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d CEA LETI   (France)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Carrier transport; Compact model; MOSFET; Quasi ballistic

Indexed keywords

CARRIER TRANSPORT; COMPUTER SIMULATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; MOSFET DEVICES; PROBABILITY;

COMPACT MODELS; QUASI-BALLISTICS;

BACKSCATTERING;

EID: 33846963511     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856181     Document Type: Article

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