Performance of 70nm Strained-Silicon CMOS Devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 103-104

  Hwang, J R ^c   Ho, J H ^c   Ting, S M ^c   Chen, T P ^c   Hsieh, Y S ^c   Huang, C C ^c   Chiang, Y Y ^c   Lee, H K ^c   Liu, Ariel ^c   Shen, T M ^c   Braithwaite, G ^a   Currie, M ^a   Gerrish, N ^a   Hammond, R ^a   Lochtefeld, A ^a   Singaporewala, F ^a   Bulsara, M ^a   Xiang, Q ^b   Lin, M R ^b   Shiau, W T ^c   Loh, Y T ^c   Chen, J K ^c   Chien, S C ^c   Wen, Frank ^c   more..

^a AmberWave Systems Corporation   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON MOBILITY; MOSFET DEVICES; SILICON COMPOUNDS; SUBSTRATES; THERMAL CONDUCTIVITY; SI-GE ALLOYS; SILICON WAFERS; SINGLE CRYSTALS;

SILICON DEVICES;

CMOS INTEGRATED CIRCUITS;

% REDUCTIONS; CMOS DEVICES; PEAK CURRENTS; PERFORMANCE; RING OSCILLATOR; SI PROCESS; SI-CMOS; SIGE VIRTUAL SUBSTRATES; SILICON CMOS; STRAINED-SILICON;

EID: 0141649561     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. E.A. Fitzgerald et al., Symp. on Sol. Stat. Dev., p. 144, 2002.
2. Y. Taur et al., Fundamentals of Modern VLSI Devices, p. 205, 1998.
3. C. T. Huang, et al., IEEE Trans, on Elec. Dev., p. 601, 1997.