Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 53-56

  Yin, Haizhou ^a   Hobart, K D ^b   Peterson, Rebecca L ^a   Kub, F J ^b   Shieh, S R ^c   Duffy, T S ^c   Sturm, J C ^a  

^a Princeton University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; SILICON ON INSULATOR (SOI);

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; STRAIN; THICKNESS MEASUREMENT;

MOSFET DEVICES;

EID: 0842288293     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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