Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

IBM Journal of Research and Development

Volumn 50, Issue 4-5, 2006, Pages 363-376

  Antoniadis, Dimitri A ^a   Aberg, Ingvar ^a   Ní Chléirigh, Cáit ^a   Nayfeh, Osama M ^a   Khakifirooz, Ali ^b   Hoyt, Judy L ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

^b USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIMENSIONAL STABILITY; MATHEMATICAL MODELS; STRAIN; SWITCHES; TECHNOLOGY TRANSFER;

CHANNEL MATERIAL INNOVATIONS; DIMENSIONAL SCALING; SWITCH DELAY;

MOSFET DEVICES;

EID: 33748575889     PISSN: 00188646     EISSN: 00188646     Source Type: Journal    
DOI: 10.1147/rd.504.0363     Document Type: Article

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