Examination of additive mobility enhancements for uniaxial stress combined with biaxially strained Si, biaxially strained SiGe and Ge channel MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 719-722

  Weber, O ^a   Irisawa, T ^b   Numata, T ^b   Harada, M ^b   Taoka, N ^c   Yamashita, Y ^b   Yamamoto, T ^b   Sugiyama, N ^b   Takenaka, M ^a   Takagi, S ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b MIRAI ASET   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON DEVICES; ELECTRON MOBILITY; FOOD ADDITIVES; GERMANIUM; HOLE MOBILITY; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SHEAR STRAIN; SILICON; SILICON ALLOYS; STRESSES;

BIAXIAL STRAINING; BIAXIAL STRESSES; BIAXIAL TENSILE STRAIN; CONDUCTION BANDS; EFFECTIVE MASSES; HIGH MOBILITY CHANNELS; MECHANICAL STRESSING; MOBILITY ENHANCEMENT; MOSFETS; N-MOSFETS; P-MOSFETS; PIEZORESISTANCE COEFFICIENTS; STRAINED-SI; STRAINED-SIGE; UNI-AXIAL STRAINS; UNIAXIAL STRESSES;

TENSILE STRAIN;

EID: 50249165347     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419047     Document Type: Conference Paper

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