Nanoporous dielectric films: Fundamental property relations and microelectronics applications

Interlayer Dielectrics for Semiconductor Technologies

Volumn , Issue , 2003, Pages 261-325

  Plawsky, J L ^a   Gill, W N ^a   Jain, A ^b   Rogojevic, S ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CHEMICAL BONDS; DIELECTRIC FILMS; DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; LEAKAGE CURRENTS; LOW-K DIELECTRIC; METAL TESTING; MICROELECTRONICS; ORGANIC POLYMERS; POROSITY; POROUS MATERIALS; SILICA; SILICA GEL; SURFACE CHEMISTRY; THERMAL CONDUCTIVITY; XEROGELS;

AMBIENT ENVIRONMENT; CAPACITOR STRUCTURES; FUNDAMENTAL PROPERTIES; INTER-LAYER DIELECTRICS; INTER-MOLECULAR FORCES; METAL DEPOSITION; MICRO-ELECTRONIC DEVICES; NANOPOROUS DIELECTRIC FILM;

COPPER;

EID: 84904027740     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-012511221-5/50011-8     Document Type: Chapter

References (216)

1. The National Technology Roadmap for Saniconductors-Grand Challenges 1997, Vol. 11. Semiconductor Industry Association, SIA.
2. Sakurai T. IEEE Trans. Elect. Dev. 1993, 40:118.
3. Adler V., Friedman E.G. Proc. IX Ann. IEEE Int. ASI Conf. and Exhibit. 1996, 201. J.D. Meindl, P.R. Mukund, T. Gabara, R. Sridhar (Eds.).
4. Murarka S.P. Mater. Sci. Eng. R 1997, 19:87.
5. Murarka S.P., Hymes S.W. Crit. Rev. Solid State Mater. Sci. 1995, 20:87.
6. Peters L. Semicond. Int. 1998, 21:64.
7. Miller R.D. Science 1999, 286:421.
8. Ahlburn B.T. Proc. Int. Semicond. Tech. Conf. 2001, 216. M. Yang (Ed.).
9. Homma T. Mater. Sci. Eng. R 1998, 23:243.
10. Hendricks N.H. Mater. Res. Soc. Symp. Proc. 1997, 443:3.
11. Treichel H., Ruhl G., Ansmann P., Wurl R., Muller C., Dietlmeier M. Microelectron. Eng. 1998, 40:1.
12. Treichel H. J. Electron. Mater. 2001, 30:290.
13. Maier G. Prog. Polym. Sci. 2001, 26:3.
14. Hacker N.P. MRS Bull. 1997, 22:33.
15. Xu Y., Tsai Y.-P., Tu K.N., Zhao B., Liu Q.-Z., Brongo M., Sheng G.T.T., Tung C.H. Appl. Phys. Lett. 1999, 75:853.
16. Xu Y., Zheng D.W., Tsai Y.-P., Tu K.N., Zhao B., Liu Q.-Z., Brongo M., Ong C.W., Choy C.L., Sheng G.T.T., Tung C.H. J. Electron. Mater. 2001, 30:309.
17. Neirynck J.M., Gutmann R.J., Murarka S.P. J. Electrochem. Soc. 1999, 146:1602.
18. Martin S.J., Godschalx J.P., Mills M.E., Shaffer E.O., Townsend P.H. Adv. Mater. 2000, 12:1769.
19. Goldblatt R.D., Agarwala B., Anand M.B., Barth E.P., Biery G.A., Chen Z.G., Cohen S., Connolly J.B., Cowley A., Dalton T., Das S.K., Davis C.R., Deutsch A., DeWan C., Edelstein D.C., Emmi P.A., Faltermeier C.G., Fitzsimmons J.A., Hedrick J., Heidenreich J.E., Hu C.K., Hummel J.P., Jones P., Kaltalioglu E., Kastenmeier B.E., Krishnan M., Landers W.F., Liniger E., Liu J., Lustig N.E., Malhotra S., Manger D.K., McGahay V., Mih R., Nye H.A., Purushothaman S., Rathore H.A., Seo S.C., Shaw T.M., Simon A.H., Spooner T.A., Stetter M., Wachnik R.A., Ryan J.G. Proc. IEEE Int. Interconn. Tech. Conf. 2000, 261.
20. Waeterloos J.J., Struyf H., Van Aelst J., Castillo D.W., Lucero S., Caluwaeters R., Alaerts C., Mannaert G., Boullart W., Sleeckx E., Schaekers M., Tokef Z., Vervoort I., Steenbergen J., Sijmus B., Vos I., Meuris M., Iacopi F., Donaton R.A., Van Hove M., Vanhaelemeersch S., Maex K. Proc. IEEE 2001 Int. Interconn. Tech. Con. 2001, 253-254.
21. Jain A., Rogojevic S., Ponoth S., Gill W.N., Simonyi E., Chen S.-T., Plawsky J.L. J. Appl. Phy. 2002, 91:3275.
22. Jain A., Rogojevic S., Gill W.N., Plawsky J.L., Matthew I., Tomozawa M., Simonyi E. J. Appl. Phy. 2001, 90:5832.
23. Lau K.K.S., Gleason K.K. Mater. Res. Soc. Symp. Proc. 1999, 554:209.
24. Ding S.-J., Wang P.-F., Zhang D.W., Wang J.-T., Lee W.W. Mater. Lett. 2001, 49:154.
25. Cho C.-C., Wallace R.M., Files-Sesler L.A. J. Electron. Mater. 1994, 23:827.
26. Nason T.C., Lu T.-M. Thin Solid Films 1994, 239:27.
27. Denison D.R., Barbour J.C., Burkhart J.H. J. Vac. Sci. Technol. A 1996, 14:1124.
28. Hasegawa S., Tsukaoka T., Inokuma T., Kurata Y. J. Non-Cryst. Solids 1998, 240:154.
29. Shieh B., Saraswat K.C., McVittie J., List S., Nag S., Islamraja M. IEEE Electron. Dev. Lett. 1998, 19:16.
30. Ramos T., Roderick K., Maskara A., Smith D.M. Mater. Res. Soc. Symp. Proc. 1997, 443:47.
31. Bruinsma P.-J., Hess N.J., Botha J.R., Liu J., Baskaran S. Mater. Res. Soc. Symp. Proc. 1997, 443:105.
32. Baskaran S., Liu J., Domansky K., Kohler N., Li X., Coyle C., Fryxell G.E., Thevuthasan S., Williford R.E. Adv. Mater. 2000, 12:291.
33. Fan H., Bentley H.R., Kathan K.R., Clem P., Lu Y., Brinker C.J. J. Non-Cryst. Solids 2001, 285:79.
34. Seraji S., Wu Y., Forbess M., Limmer S.J., Chou T., Cao G. Adv. Mater. 2000, 12:1695.
35. Nguyen C.V., Carter K.R., Hawker C.J., Hedrick J.L., Jaffe R.L., Miller R.D., Remenar J.F., Rhee H-W., Rice P.M., Toney M.F., Trollsas M., Yoon D.Y. Chem. Mater. 1999, 11:3080.
36. Nitta S., Jain A., Pisupatti V., Gill W.N., Wayner P.C., Plawsky J.L. J. Vac. Sci. Tech. B 1999, 17:205.
37. Nitta S., Jain A., Gill W.N., Wayner P.C., Plawsky J.L. J. Appl. Phy. 1999, 86:5870.
38. Zhao D., Yang P., Melosh N., Feng J., Chmelka B.F., Stucky G.D. Adv. Mater. 1999, 10:1380.
39. Birdsell E.D., Gerhardt R.A. Mater. Res. Soc. Symp. Proc. 1998, 511:111.
40. Wang Z., Wang H., Mitra A., Huang L., Yan Y. Adv. Mater. 2001, 13:746.
41. Sanchez C., Lebeau B. MRS Bull. 2001, 26:377.
42. Lee J.-H., Chopra N., Ma J., Lu Y.-C., Huang T.-F., Willecke R., Yau W.-F., Cheung D., Yieh E. Mater. Res. Soc. Symp. Proc. 2000, 612:D3.4.1.
43. Grill A., Patel V. Mater. Res. Soc. Symp. Proc. 2000, 612:D 2.9.1.
44. Hedrick J.L., Miller R.D., Hawker C.J., Carter K.R., Volksen W., Yoon D.Y., Trollss M. Adv. Mater. 1998, 10:1049.
45. Remenar J.F., Hawker C.J., Hedrick J.L., Kim S.M., Miller R.D., Nguyen C., Trollss M., Yoon D.Y. Mater. Res. Soc. Symp. Proc. 1998, 511:69.
46. Hawker C.J., Hedrick J.L., Miller R.D., Volksen W. MRS Bull. 2000, 25:54.
47. Yang S., Mirau P.A., Pai C.-S., Nalamasu O., Reichmanis E., Lin E.K., Lee H.-J., Gidley D.W., Sun J. Chem. Mater. 2001, 13:2762.
48. Provatas A., Matisons J.G. Trends Polym. Sci. 1997, 5:327.
49. Maddalon C., Barla K., Denis E., Lous E., Perrin E., Lis S., Lair C., Dehan E. Microelectron. Eng. 2000, 50:33.
50. Aoi N. Jpn. J. Appl. Phys. 1997, 36:1355.
51. Shea K.J., Loy D.A. Bridged polysilsesquioxanes: molecular engineering of hybrid-organic-inorganic materials, Vol. 26, No. 5. MRS Bull. 2001, 26:368.
52. http://www.sigma-aldrich.com/a.ldrich/brochure/al_pp_poss.pdf.
53. Hrubesh L.W., Keene L.E., Lattorre V.R. J. Mater. Res. 1993, 8:1736.
54. da Silva A.A., dos Santos D.I., Aegeter M.A. J. Non-Cryst. Solids. 1987, 95-96:1159.
55. Brüesch P., Stucki F., Baumann T., Kluge-Weiss P., Brühl B., Niemeyer L., Strümpler R., Ziegler B., Mielke M. Appl. Phys. A 1993, 57:329.
56. Jo M.-H., Hong J.-K., Park H.-H., Kim J.-J., Hyun S.-H. Microelectron. Eng. 1997, 33:343.
57. Yang H.-S., Choi S.-Y., Hyun S.-H., Hong J.-K. J. Non-Cryst. Solids. 1997, 221:151.
58. Chow L.A., Yu T., Dunn B.S., Tu K.N., Chiang C. Mater. Res. Soc. Symp. Proc. 1997, 476:105.
59. Ramos T., Rhoderick K., Roth R., Brungardt L., Wallace S., Drage J., Dunne J., Endisch D., Katsanes R., Viernes N., Smith D.M. Mater. Res. Soc. Symp. Proc. 1997, 511:105.
60. Jain A., Rogojevic S., Ponoth S., Agarwal N., Matthew I., Gill W.N., Persans P., Tomozawa M., Plawsky J.L., Simonyi E. Thin Solid Films 2001, 398-399:513.
61. Jain A. Processing dependent properties of silica xerogels for interlayer dielectric application. Ph.D Thesis 2001, Rensselaer Polytechnic Institute.
62. Birdsell E.D., Gerhardt R.A. Mater. Res. Soc. Symp. Ser. 1998, 511:111.
63. Warren W.L., Lenahan P.M., Brinker C.J., Ashley C.S., Reed S.T., Shaffer G.R. J. App. Phy. 1991, 69:4404.
64. Jo M.-H., Park H.-H. Appl. Phys. Lett. 1998, 72:1391.
65. Jhonson W.C. IEEE Trans. Nucl. Sci. 1972, 19:33.
66. Gersten J.L., Smith F.W. The Physics and Chemistry of Materials 2001, 218. John Wiley and Sons, New York.
67. Abdelmalek F., Chovelon J.M., Lacroix M., Renault-Jaffrezic N., Matejec V. Sensors Actuators B-Chem. 1999, 56:234.
68. Abdelmalek F., Chovelon J.M., Lacroix M., Renault-Jaffrezic N., Berkova D., Matejec V., Kasik I., Chomat M., Gagnaire H. Thin Solid Films 1999, 340:280.
69. Lee D. Electromagnetic Principles of Integrated Optics 1986, John Wiley and Sons, New York.
70. Woignier T., Reynes J., Hafidi Alaoui A., Beurroies I., Phalippou J. J. Non-Cryst. Solids 1998, 241:45.
71. Chow L.A., Dunn B., Tu K.N., Chiang C. J. Appl. Phy. 2000, 87:7788.
72. Zhao J.H., Du Y., Morgen M., Ho P.S. J. Appl. Phy. 2000, 87:1575.
73. Moner-Girona M., Roig A., Molins E., Martinez E., Esteve J. Appl. Phys. Lett. 1999, 75:653.
74. Fabes B.D., Oliver W.C. J. Non-Cryst. Solids 1990, 121:348.
75. Ashkin D., Haber R.A., Wachtman J.B. J. Am. Ceram. Soc. 1990, 73:3376.
76. Adachi T., Sakka S. J. Mater. Sci. 1990, 25:4732.
77. Flannery C.M., Murray C., Streiter I., Schulz S.E. Thin Solid Films 2001, 388:1.
78. Chiang C., Mack A.S., Pan C., Ling Y., Fraser D. Mater. Res. Soc. Symp. Proc. 1995, 381:123.
79. Baklanov M.R., Jehoul C., Flannery C.M., Mogilnikov K.P., Gore R., Gronbeck D., Prokopowicz G., Sullivan C., You Y., Pugliano N., Gallagher M. Proc. MRS Advanced Metallization Conference (AMC2001) 2001.
80. Gibson L., Ashby M. Cellular Solids 1997, Cambridge University Press, New York. 2nd edn.
81. Rice R.W. J. Mater. Sci. 1996, 31:102.
82. Rice R.W. J. Mater. Sci. 1996, 31:1509.
83. Rice R.W. J. Am. Ceram. Soc. 1993, 76:1801.
84. Wang J.C. J. Mater. Sci. 1984, 19:801.
85. Mizusaki J., Tsuchiya S., Waragai K., Tagawa H., Arai Y., Kuwayama Y. J. Am. Ceram. Soc. 2000, 79:109.
86. Garboczi E.J., Day A.R. J. Mech. Phys. Solids 1995, 43:1349.
87. Roberts A.P., Garboczi E.J. J. Am. Ceram. Soc. 2000, 83:3041.
88. Garboczi E.J. NIST Internal Report 1998, available at, Part II, Chapter 7. http://ciks.cbt.nist.gov/garboczi.
89. Tokita M., Niki R., Nikichi J. J. Chem. Phys. 1985, 83:2583.
90. Ma H.-S., Roberts A.P., Prevost J.-H., Jullien R., Scherer G.W. J. Non-Cryst. Solids 2000, 277:127.
91. Nix W.D. Metall. Trans. A 1989, 20:2217.
92. Murray C., Flannery C., Streiter I., Schulz S.E., Baklanov M.R., Mogilnikov K.P., Himcinschi C., Friedrich M., Zahn D.R.T., Gessner T. Microelectron. Eng. 2002, 60:133.
93. Katagiri T., Maekawa T. J. Non-Cryst. Solids 1991, 134:183.
94. Agren P., Pendleton P., Rosenholm J.B. Adsorption 1999, 5:305.
95. Brinker C.J., Scherer G.W. Sol-Gel Science-The Physics and Chemistry of Sol-Gel Processing 1990, Academic Press, New York.
96. Vichit-Vadakan W., Scherer G.W. J. Am. Ceram. Soc 2000, 83:2240.
97. Currey J.D. Proc. Inst. Mech. Eng. Part H-J. Eng. Med. 1998, 212:399-411.
98. Rhu J.Y., Kuhn-Spearing L., Zioupos P. Med. Eng. Phys. 1998, 20:92.
99. Lu Y., Fan H., Doke N., Loy D., Assink R., LaVan D.A., Brinker C.J. J. Am. Chem. Soc. 2000, 122:5258.
100. Padovani A.M., Rhodes L., Riester L., Lohman G., Tsuie B., Conner J., Allen S.A.B., Kohl P.A. Electrochemical and Solid State Letters 2000, 4:F25-F28.
101. Zhao J.-H., Ryan T., Ho P.S., McKerrow A.J., Shih W.-Y. J. Appl. Phys. 2000, 88:3029.
102. Carlotti G., Doucet L., Dupeux M. Thin Solid Films 1997, 296:102.
103. Chen F., Li B., Sullivan T.D., Gonzalez C.L., Muzzy C.D., Lee H.K., Levy M.D., Dashiell M.W., Kolodzey J. J. Vac. Sci. Technol. B 2000, 18:2826.
104. Jin C., Wetzel J. Proc. IEEE Int. Interconn. Tech. Conf. 2000, 99-101.
105. Zheng D.W., Xu Y.H., Tsai Y.P., Tu K.N., Patterson P., Zhao B., Liu Q.-Z., Brongo M. Appl. Phys. Lett. 2000, 76:2008.
106. Xu Y., Tsai Y., Zheng D.W., Tu K.N., Ong C.W., Choy C.L., Zhao B., Liu Q.-Z., Brongo M. J. Appl. Phys. 2000, 88:5744.
107. Im J., Shaffer E.O., Peters R., Rey T., Murlick C., Sammler R.L. Proc. Int. Conf. on Microelectronics 1996, 168-175.
108. Patel K.S., Kohl P.A., Allen S.A.B. J. Polym. Sci., Pt. B: Polym. Phys. 2000, 38:1634.
109. Grove N.R., Kohl P.A., Allen S.A.B., Jayaraman S., Shick R. J. Polym. Sci., Pt. B: Poly. Phys. 1999, 37:3003.
110. Chen Y.T., Huang C.M. Polymer 1998, 39:6643.
111. Carter K.R., DiPietro R.A., Sanchez M.I., Swanson S.A. Chem. Mater. 2001, 13:213.
112. Wang J., Shi F.G., Nieh T.G., Zhao B., Brongo M.R., Qu S., Rosenmayer T. Scripta Mater. 2000, 42:687.
113. Shaffer E.O., Mills M.E., Hawn D., Gestel M.V., Knorr A., Gundlach H., Kumar K., Kaloyeros A.E., Geer R.E. Mater. Res. Soc. Symp. Ser. 1998, 511:133.
114. Buchwalter L.P. J. Adhesion 2000, 72:269.
115. Lau S.H., Tolentino E., Lim Y., Koo A. J. Electron. Mater. 2001, 30:299.
116. Shaffer E.O., McGarry F.J., Hoang L. Polym. Sci. Eng. 1996, 36:2375.
117. Haereid S., Nilsen E., Ranum V., Einarsrud M.-A. J. Sol Gel Sci. and Tech. 1997, 8:153.
118. Smith, D. M., Johnston, G. P., Ackerman, W. C., and Jeng, S.-P. (1998) US Patent #5753305.
119. Woignier T., Phalippou J. J. Non-Cryst. Solids 1988, 100:404.
120. Im J.-H., Shaffer E.O., Stokich T., Strandjord A., Hetzner J., Curphy J., Karas C., Meyers G., Hawn D., Chakrabarti A., Froelicher S. J. Electron. Packag. Trans. ASME 2000, 122:28.
121. Shaffer E.O., Howard K.E., Mills M.E., Townsend P.H. Mater. Res. Soc. Symp. Proc. 1999, 612:D1.1.1.
122. Shen Y.-L. J. Vac. Sci. Technol. B 1999, 17:2115.
123. Shih W.Y., Levine J., Chang M. Conf. Proc. ULSI XII 1997, 479.
124. Fury M. Solid State Technol. 1999, 42:33.
125. Morand Y. Microelectron. Eng. 2000, 50:391.
126. Goodson K.E., Yu Y.S. Annu. Rev. Mater. Sci. 1999, 29:261.
127. Cahill D.G. Microscale Energy Transport 1998, 95. Taylor and Francis, Washington DC. C.-L. Tien, A. Majumdar, F.M. Gerner (Eds.).
128. Goodson K.E., Ju Y.S., Asheghi M. Microscale Energy Transport 1998, 229. Taylor and Francis, Washington DC. C.-L. Tien, A. Majumdar, F.M. Gerner (Eds.).
129. Hrubesh L.W., Pekala R.W. J. Mater. Res. 1994, 9:731.
130. Srivastava G.P. MRS Bull. 2001, 26:445.
131. Ziman M. Electrons and Phonons 1960, Oxford University Press, London.
132. Kingery W.D., Bowen H.K., Uhlmann D.R. Introduction to Ceranics 1976, 617. John Wiley and Sons, New York. 2nd edn.
133. Kittel C. Introduction to Solid State Physics 2000, 534. John Wiley and Sons, New York. 7th edn.
134. Vincenti W.G., Kruger C.H. Introduction to Physical Gas Dynamics 1977, Robert Krieger Publ., New York.
135. Cahill D.G., Tait R.H., Stephens R.B., Watson S.K., Pohl R.O. In Thermal Conductivity 1990, vol. 21:3-16. Plenum, New York. C.J. Cremers, H.A. Fine (Eds.).
136. Landauer R. J. Appl. Phys. 1952, 23:779.
137. Viskanta R., Gore J.P. Int. Comm. Heat Mass Trans. 1998, 25:151.
138. Argento C., Bouvard D. Int. J. Heat Mass Transfer 1996, 39:1343.
139. Kurashige M., Mishima M., Imai K. J. Therm. Stresses 1999, 22:713.
140. Roberts A.P. Phys. Rev. E 1997, 55:R1286.
141. Zeng S.Q., Hunt A., Greif R. J. Heat Transfer 1995, 117:1055.
142. Carpenter J.A. Laser Induced Damage in Optical Materials-V, Proc. SPIE 1995, 2714:445.
143. Govorkov S., Ruderman W., Horn M.W., Goodman R.B., Rothschild M. Rev. Sci. Instrum. 1997, 68:3828.
144. Callard S., Tallarida G., Borghesi A., Zanotti L. J. Non-Cryst. Solids 1999, 245:20.
145. Hu C., Morgen M., Ho P.S., Jain A., Gill W.N., Plawsky J.L., Wayner P.C. Appl. Phys. Lett. 2000, 77:145.
146. Lee S.-M., Cahill D.G. J. Appl. Phys. 1997, 81:2590.
147. Cahill D.G., Katiyar M., Abelson J.R. Phys. Rev. B 1994, 50:6077.
148. Cahill D.G. Rev. Sci. Instrum. 1990, 61:802.
149. Cahill D.G., Allen T.A. Appl. Phys. Lett. 1994, 65:309.
150. Ju Y.S., Goodson K.E. J. Appl. Phys. 1998, 83:966.
151. Cahill D.G., Pohl R.O. Phys. Rev. B 1987, 35:4067.
152. Bertolotti M., Li Voti R., Liakhou G.L., Sibilia C. Rev. Sci. Instrum. 1990, 64:802.
153. Bertolotti M., Liakhou G.L., Li Voti R., Paoloni S., Sibilia C. J. Appl. Phys. 1998, 83:966.
154. Wu Z.L., Thomsen M., Kuo P.K., Lu Y.S., Stolz C., Kozlowski M. Laser Induced Damage in Optical Materials-V, Proc. SPIE 1995, 2714:465.
155. Wu Z.L., Riechling M., Grunbeck H., Fan Z.X., Schafer D., Matthias E. Laser Induced Damage in Optical Materials-V, Proc. SPIE 1992, 1624:465.
156. Gross J., Fricke J. J. Non-Cryst. Solids 1992, 145:217.
157. Parashar V.K., Raman V., Bahl O.P. J. Mater. Sci. Lett. 1996, 15:1403.
158. Scherer G.W., Calas S., Semp'er'e R. J. Sol-Gel Sci. Technol. 1998, 13:937.
159. Varner E.B., Marieb T., Mack A.S., Lee J., Meyer W.K., Goodson K.E. Mater. Res. Soc. Symp. Proc. 1997, 279.
160. Lee W.W., Ho P.S. MRS Bull. 1997, 22:19.
161. Sinha A.K., Moghadam F., Mosley R., Chang M., Wanger L.L. IEEE Int. Reliability Phys. Symp. Proc. 1997, 1.
162. Lu J., Hu C., Kiene M., Ho P.S., Volksen W., Miller R. Presented at Mater. Res. Soc. Spring Meeting 2001.
163. Liu X., Nilsson O., Fricke J., Pekala R.W. J. Appl. Phys. 1993, 73:581.
164. Emmerling A., Fricke J. J. Sol-Gel Sci. Tech. 1997, 8:781.
165. Feng S., Halperin B.I., Sen P.N. Phys. Rev. B 1987, 35:197.
166. Sheng P., Tao R. Phys. Rev. B 1985, 31:6131.
167. Dodd S.P., Saunders G.A., Cankurtaran M., James B. J. Mater. Sci. 2001, 36:723.
168. Wanner A. Mater. Sci. Eng. A 1998, 248:25.
169. Rogers J.A., Case C. Appl. Phys. Lett. 1999, 75:865.
170. Nicolet M.A. Tungten and Other Refractory Metals for VLS1 Applications II 1987, 19-26. MRS, Pittsburgh, PA. E.K. Broadbent (Ed.).
171. Ryu C., Lee H., Kwon K.-W., Loke A.L.S., Wong S.S. Solid State Technol. 1999, April:53-56.
172. Lanford W.A., Bedell S., Isberg P., Hjorvarsson B., Lakshmanan S.K., Gill W.N. J. Appl. Phys. 1999, 85:1487.
173. Krishnamoorthy A., Chanda K., Murarka S.P., Ramanath G., Ryan J.G. Appl. Phys. Lett. 2001, 78:2467.
174. Deryagin B.V., Krotova N.A., Smilga V.P. Adhesion of Solids 1978, Consultants Bureau, New York.
175. Adhesion Measurement of Thin Films, Thick Films, and Bulk Coatings. A Symposium Presented at ASTM Headquarters, ASTM, Philadelphia PA, 2-4 November 1976, K.L. Mittal (Ed.).
176. Israelachvili J.N., Tabor D. Prog Surf. Membr. Sci. 1973, 7:1.
177. Arcot B., Shy Y.T., Murarka S.P., Shepard C., Lanford W.A. Mater. Res. Soc. Symp. Proc. 1991, 203:27.
178. Rogojevic S., Jain A., Wang F., Gill W.N., Plawsky J.L., Lu T.M. Interaction between silica xerogel and Copper. J. Electrochem. Soc. 2002, 149:F122.
179. Nicolet M.-A. Thin Solid Films 1978, 52:415.
180. Gallais P., Hantzpergue J.J., Remy J.C. Thin Solid Films 1988, 62:227.
181. Buchwalter L.P. J. Adhesion Sci. Technol. 1995, 9:97.
182. Murarka S.P. Silicides for VLSI Applications 1983, Academic Press, New York.
183. Pretorius R., Harris J.M., Nicolet M.-A. Solid State Electron. 1978, 21:667.
184. Kumar A., Bakhru H., Jin C., Lee W.W., Lu T.-M. J. Appl. Phys. 2000, 87:3567.
185. Rogojevic S., Jain A., Wang F., Gill W.N., Wayner P.C., Plawsky J.L., Lu T.-M., Yang G.-R., Lanford W.A., Kumar A., Bakhru H., Roy A.N. J. Vac. Sci. Technol. B 2001, 19:354.
186. Loke A.L.S., Wetzel J.T., Townsend P.H., Tanabe T., Vrtis R.N., Zussman M.P., Kumar D., Ryu C., Wong S. IEEE Trans. Electron. Dev. 1999, 46:2178.
187. Lanckmans F., Gray W.D., Brijs B., Maex K. Microelectron. Eng. 2001, 55:329.
188. Abdul-Hak A., Ahrens C., Hasse W., Ullmann J. Microelectron. Eng 1997, 37/38:205.
189. Tsui B.-Y., Fang K.-L., Lee S.-D. J. Electrochem. Soc. 2001, 148:G616.
190. Du M., Opila R.L., Donnelly V.M., Sapjeta J., Boone T. J. Appl. Phys. 1999, 85:1496.
191. Das J.H., Morris J.E. J. Appl. Phys. 1989, 66:5816.
192. Zhang J.Y., Shan Y.R., Soane D.S. J. Appl. Phys. 1992, 71:2655.
193. Popovici D., Piyakis K., Meunier M., Sacher E. J. Appl. Phys. 1998, 83:108.
194. Godbey D.J., Buckley L.J., Purdy A.P., Snow A.W. Thin Solid Films 1997, 308-309:470.
195. Chang K.-M., Deng I-C., Tsai Y.-P., Wen C-Y., Yeh S.-J., Wang S.-W., Wang J.-Y. J. Electrochem. Soc. 2000, 147:2332.
196. Kim K.J., Lee N-E., Kim M.C., Boo J-H. Thin Solid Films 2001, 398-399:657.
197. Liu P-T., Chung T.-C., Yang Y.-L., Cheng Y.-F., Sze S.M. IEEE Trans. Electron. Dev. 2000, 47:1733.
198. Chang T.-C., Liu P-T., Mei Y.-J., Mor Y.-S., Peng T.-H., Yang Y.-L., Sze S.M. J. Vac. Sci. Technol. B 1999, 17:2325.
199. Application Note Number 2241, Keithley Instruments, Inc.
200. Wong S. Presentation at SRC Center for Advanced Interconnect Science and Technology Meeting 2001.
201. Shacham-Diamand Y., Dedhia A., Hoffstetter D., Oldham W.G. J. Electrochem. Soc. 1993, 140:2427.
202. Raghavan G., Chiang C., Anders P.B., Tzeng S.-M., Villasol R., Bai G., Bohr M., Frazer D.B. Thin Solid Films 1995, 262:168.
203. Krieger U.K., Lanford W.A. J. Non-Cryst. Solids 1988, 102:50.
204. Kapila D., Plawsky J.L. AIChE J. 1993, 39:1186.
205. Kapila D., Plawsky J.L. Chem. Eng. Sci. 1995, 50:2589.
206. Rogojevic S. PhD Thesis 2001, Rensselaer Polytechnic Institute, Troy, NY.
207. Mallikarjunan A., Murarka S.P., Lu T.-M. Appl. Phys. Lett. 2001, 79:1855.
208. Papageorgiou N., Barbe C., Gratzel M. J. Phys. Chem. B 1998, 102:4156.
209. Levya-Ramos R., Geankoplis C.J. Chem. Eng. Sci. 1985, 40:799.
210. Andsager D., Hetrick J.M., Hilliard J., Nayfeh M.H. J. Appl. Phys. 1995, 77:4399.
211. Reyes W.C., Sinfelt J.H., DeMartin G.J. J. Phys. Chem. B 2000, 104:5750.
212. Burgancs V.N., Sotirchos S.V. AIChE J. 1987, 33:1678.
213. McBrayer J.D., Swanson R.M., Sigmon T.W. J. Electrochem. Soc.: Solid-State Sci. Technol. 1986, 33:1242.
214. Gupta D., Vieregge K., Srikrishnan K.V. Appl. Phys. Lett. 1992, 61:2178.
215. Fisher J.C. J. Appl. Phys. 1951, 22:74.
216. Loke A.L.S., Ryu C., Yue C.P., Cho J.S.H., Wong S.S. IEEE Electron. Dev. Lett. 1996, 17:549.