A high performance 0.13 μm copper BEOL technology with low-k dielectric

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 261-263

  Goldblatt, R D ^a   Agarwala, B ^a   Anand, M B ^a   Barth, E P ^a   Biery, G A ^a   Chen, Z G ^a   Cohen, S ^a   Connolly, J B ^a   Cowley, A ^a   Dalton, T ^a   Das, S K ^a   Davis, C R ^a   Deutsch, A ^a   DeWan, C ^a   Edelstein, D C ^a   Emmi, P A ^a   Faltermeier, C G ^a   Fitzsimmons, J A ^a   Hedrick, J ^a   Heidenreich, J E ^a   Hu, C K ^a   Hummel, J P ^a   Jones, P ^a   Kaltalioglu, E ^a   Kastenmeier, B E ^a   Krishnan, M ^a   Landers, W F ^a   Liniger, E ^a   Liu, J ^a   Lustig, N E ^a   Malhotra, S ^a   Manger, D K ^a   McGahay, V ^a   Mih, R ^a   Nye, H A ^a   Purushothaman, S ^a   Rathore, H A ^a   Seo, S C ^a   Shaw, T M ^a   Simon, A H ^a   Spooner, T A ^a   Stetter, M ^a   Wachnik, R A ^a   Ryan, J G ^a   more..

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; INTEGRATED CIRCUIT INTERCONNECTS; INTEGRATION;

CURRENT GENERATION; FLUOROSILICATE GLASS; INTEGRATION SCHEME; INTER-METAL DIELECTRICS; LOW-K INTEGRATION; RELIABILITY STANDARD; SEMICONDUCTOR DIELECTRICS; TECHNOLOGY NODES;

LOW-K DIELECTRIC;

EID: 84962909346     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854342     Document Type: Conference Paper

References (2)

1. D. Edelstein J. Heidenreich,R. D.Goldblatt,W.Cote,C. Uzoh, N. Lustig, P. Roper, T. McDevitt, W. Motsiff, A. Simon, A. Stamper, J. Dukovic, R. Wachnik, H. Rathore, S. Luce, J. Slattery, "Full Copper Wiring in a Sub-0.25 μm CMOS ULSI Technology", Tech. Digest IEEE Intern. Electron Devices Mtg., pp.773-776 (1997).
2. E.P.Barth, "Integration of Copper and Fluorosilicate Glass for 0.18 μm Interconnections," in press.