Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization

Applied Physics Letters

Volumn 78, Issue 17, 2001, Pages 2467-2469

  Krishnamoorthy, A ^a   Chanda, K ^a   Murarka, S P ^a   Ramanath, G ^a   Ryan, J G ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035938366     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1365418     Document Type: Article

References (15)

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