Kinetics of copper drift in low-ft polymer interlevel dielectrics

IEEE Transactions on Electron Devices

Volumn 46, Issue 11, 1999, Pages 2178-2187

  Loke, Alvin L S ^a,b,c,d   Wetzel, Jeffrey T ^a,b,d,e   Townsend, Paul H ^a,c,d,e   Tanabe, Tsuneaki ^b,c,d,e   Vrtis, Raymond N ^a,b,c,d,e   Zussman, Melvin P ^a,b,c,d,e   Kumar, Devendra ^a,b,c,d,e   Ryu, Changsup ^a,b,c,d,e   Simon Wong, S ^a,b,c,d,e  

^a Stanford University   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c MOTOROLA INC   (United States)

^d DOW CHEMICAL COMPANY   (United States)

^e ASAHI CHEMICAL INDUSTRY CO   (Japan)

Author keywords

Copper; Diffusion processes; Insulator contamination; Integrated circuit interconnections; Low permittivity dielectrics; MIS devices; Reliability testing; Semiconductor device measurements

Indexed keywords

CAPACITORS; COPPER; CROSSLINKING; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; INTEGRATED CIRCUIT TESTING; INTERCONNECTION NETWORKS; PERMITTIVITY; POLYETHERS; POLYIMIDES; REACTION KINETICS;

COPPER-INSULATOR-SILICON CAPACITORS; DIELECTRIC TIME-TO-FAILURE MEASUREMENTS; POLYMER INTERLEVEL DIELECTRICS;

ULSI CIRCUITS;

EID: 0033221292     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.796294     Document Type: Article

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