Metal drift behavior in low dielectric constant organosiloxane polymer

Applied Physics Letters

Volumn 79, Issue 12, 2001, Pages 1855-1857

  Mallikarjunan, A ^a   Murarka, S P ^a   Lu, T M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035903350     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1404408     Document Type: Article

References (17)

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14. 2.
15. An alternative approach is to assume that the metal ion drifts with its most common valence (+ 1 for Cu, + 5 for Ta and + 3 for Al). (The trend is still maintained for pre-annealed capacitors, but changes to Pt
16. See, for example: Proceedings of 1st International Conference on Polymer-Solid Interfaces, Namur, Belgium, Sept. 2-6, 1991, edited by J. J. Pireaux, P. Bertrand, and J. L. Bredas (Inst. of Phys., Philadelphia, 1992).
17. T.P. Nguyen, H. Ettaik, S. Lefrant, and G. Leising, in Ref. 16, p. 253.