Low dielectric constant, fluorine-doped SiO2 for intermetal dielectric

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 1124-1126

  Denison, D R ^a   Barbour, J C ^b   Burkhart, J H ^b  

^a LAM RESEARCH CORPORATION   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000694410     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580280     Document Type: Article

References (8)

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3. M. J. Shapiro, T. Matsuda, and S. V. Nguyen, Proceedings of the DUMIC Conference, 1995, p. 118.
4. T. Fukada and T. Akahori, in Ref. 3, p. 43.
5. J. C. Barbour and J. H. Burkhart, Proceedings of the 12th International Conference on Ion Beam Analysis, May 1995 (to be published).
6. M. Hatanaka, Y. Mizushima, O. Hataishi, and Y. Furumura, Proceedings of the VMIC Conference, 1991 (unpublished), p. 435.
7. BBN Software Products, 150 Cambridge Park Dr., Cambridge, MA 02140.
8. MTM Engineering, 473 Sapena Ct., Santa Clara, CA 95054.