Elastic properties of silicon dioxide films deposited by chemical vapour deposition from tetraethylorthosilicate

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 102-105

  Carlotti, G ^a   Doucet, L ^b,c   Dupeux, M ^c  

^a UNIVERSITY OF PERUGIA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

Chemical vapour deposition; Elastic properties; Silicon dioxide films; Tetraethylorthosilicate

Indexed keywords

BRILLOUIN SCATTERING; CHEMICAL VAPOR DEPOSITION; ELASTIC MODULI; ELASTICITY; SILICA; SILICATES; SILICON WAFERS; STRESS ANALYSIS; SURFACE WAVES; THERMAL CYCLING; THERMAL EXPANSION; VELOCITY MEASUREMENT;

LOW PRESSURE CHEMICAL VAPOUR DEPOSITION (LPCVD); PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD); POISSON'S RATIO; SUBSTRATE CURVATURE METHOD; TETRAETHYLORTHOSILICATE; THERMAL EXPANSION COEFFICIENT;

DIELECTRIC FILMS;

EID: 0031094297     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09346-7     Document Type: Article

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