Effects of post-deposition annealing ambient on Y 2O 3 gate deposited on silicon by RF magnetron sputtering

Journal of Alloys and Compounds

Volumn 529, Issue , 2012, Pages 73-83

  Quah, Hock Jin ^a   Cheong, Kuan Yew ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

Author keywords

Oxide materials; Semiconductors; Surface and interfaces; Thin films; Tunneling; X ray diffraction

Indexed keywords

ANNEALED SAMPLES; CHEMICAL FUNCTIONAL GROUPS; CURRENT CONDUCTION MECHANISMS; CURVE FITTING METHODS; EFFECTIVE OXIDE CHARGE; FORMING GAS; FOURIER TRANSFORM INFRARED SPECTROMETER; FTIR; GATE OXIDE; INTERFACE-TRAP DENSITY; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; OXIDE MATERIALS; POST DEPOSITION ANNEALING; RF-MAGNETRON SPUTTERING; SI SUBSTRATES; SURFACE AND INTERFACES; XRD; YTTRIUM SILICATES;

ANNEALING; CURVE FITTING; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FUNCTIONAL GROUPS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOS DEVICES; SEMICONDUCTOR MATERIALS; SILICATES; SILICON; SILICON OXIDES; THIN FILMS; X RAY DIFFRACTION; YTTRIUM;

SEMICONDUCTING SILICON;

EID: 84859499807     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.02.122     Document Type: Article

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