Effect of postdeposition annealing in oxygen ambient on gallium-nitride-based MOS capacitors with cerium oxide gate

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 122-131

  Quah, Hock Jin ^a   Cheong, Kuan Yew ^a   Hassan, Zainuriah ^b   Lockman, Zainovia ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Cerium oxide; gallium nitride (GaN); interfacial layer; metal organic decomposition (MOD)

Indexed keywords

ATOMIC FORCE MICROSCOPES; CERIUM OXIDES; DIELECTRIC BREAKDOWNS; EFFECTIVE OXIDE CHARGE; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAN SUBSTRATE; INTERFACIAL LAYER; INWARD DIFFUSION; METAL OXIDE SEMICONDUCTOR; METAL-ORGANIC; METAL-ORGANIC DECOMPOSITION (MOD); OXYGEN AMBIENT; PHASE TRANSFORMATION; POST DEPOSITION ANNEALING; SEMICONDUCTOR-OXIDE INTERFACE; XRD ANALYSIS;

ANNEALING; CERIUM; CERIUM COMPOUNDS; DECOMPOSITION; DIELECTRIC DEVICES; GALLIUM NITRIDE; METAL ANALYSIS; METALS; MOS CAPACITORS; OXIDES; OXYGEN; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 78650893900     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2087024     Document Type: Article

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