Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Journal of Alloys and Compounds

Volumn 497, Issue 1-2, 2010, Pages 195-200

  Lim, W F ^a   Cheong, K Y ^a   Lockman, Z ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

Author keywords

Atomic force microscopy; Crystal structure; Oxide materials; Scanning electron microscopy; Surfaces and interfaces; X ray diffraction

Indexed keywords

4H SILICON CARBIDE; 4H-SIC SUBSTRATE; ANNEALING TEMPERATURES; ARGON AMBIENT; ATOMIC FORCE MICROSCOPES; CERIUM OXIDES; CRYSTALLINE PHASIS; DEFECT-FREE SURFACES; DEPOSITED FILMS; ELLIPSOMETERS; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FILM DENSITY; GRAIN SIZE; LINE BROADENING; LORENTZ; METAL-ORGANIC; METALORGANIC DECOMPOSITION METHOD; MICROSTRAINS; OXIDE MATERIALS; PHYSICAL CHARACTERIZATION; POST DEPOSITION ANNEALING; POST-DEPOSITION; PREFERRED ORIENTATIONS; SURFACES AND INTERFACES; WILLIAMSON-HALL PLOT; XRD;

ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; ATOMS; CERIUM; CERIUM COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; DECOMPOSITION; METAL ANALYSIS; MICROSCOPES; OXIDE FILMS; OXIDES; PHASE INTERFACES; PHOTORESISTS; REFRACTIVE INDEX; SCANNING; SILICON CARBIDE; SPIN DYNAMICS; SURFACE PROPERTIES; SURFACE ROUGHNESS; X RAY DIFFRACTION;

SCANNING ELECTRON MICROSCOPY;

EID: 77950925299     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.03.009     Document Type: Article

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