SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 320, Issue 2, 1998, Pages 169-172

RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)

(8) Kim, H B a Cho, M H a Whangbo, S W a Whang, C N a Choi, S C b Choi, W K b Song, J H b Kim, S O c

a Yonsei University (South Korea)

b Korea Institute of Science and Technology (South Korea)

c Seonam University (South Korea)

Author keywords

Crystalline defects; Double domain structure; Heteroepitaxially grown; Si substrate; Yttrium oxide

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; YTTRIUM COMPOUNDS;

YTTRIUM OXIDE;

DIELECTRIC FILMS;

EID: 0032072348 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00364-2 Document Type: Article

Times cited : (6)

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